Trina TSM-DE18M(II) 490-515 505W 1500V Silver Frame

Trina TSM-DE18M(II) 490-515 505W 1500V Silver Frame

Module Power505 W
Cell TypeP-type
Colour FrameSilver Frame
Module typeMonofacial
Module Power505 W
Cell TypeP-type
Colour FrameSilver Frame
Module typeMonofacial

Product details

Series NameTSM-DE18M(II)
Series Power Range (Wp)490-515
Model NameTSM-DE18M(II) 505
Warranty Years12
Primary (Years, % Output Power)25, 84.8
Voltage at Maximum Power, Vmpp (V) At STC43
Current at Maximum Power, Impp (A) At STC11.75
Open Circuit Voltage, Voc (V) At STC51.9
Short Circuit Current, Isc (A) At STC12.35
Panel Efficiency (%) At STC21.1
Power Tolerance, - (%) At STC1
Maximum Power, Pmax (W) At NOCT381
Voltage at Maximum Power, Vmpp (V) At NOCT40.6
Current at Maximum Power, Impp (A) At NOCT9.38
Open Circuit Voltage, Voc (V) At NOCT48.4
Short Circuit Current, Isc (A) At NOCT9.5
Temperature (°C) At NOCT43±2
Operating Temperature Range (°C)-40~85
Temperature coefficient of Pmax (%/°C)-0.34
Temperature coefficient of Voc (%/°C)-0.25
Temperature coefficient of Isc (%/°C)0.04
Maximum System Voltage (V)1500
Series Fuse Rating (A)20
Cell Number150
Glass TypeAnti-reflection Coating, Tempered
Glass Thickness (mm)3.2
Junction Box Protection ClassIP68
Connector TypeMC4
Cable Crosssection (mm²)4
Cable Length (mm)280

Description

• Lower LCOE (Levelized Cost Of Energy), reduced BOS (Balance Of System) cost, shorter payback time • Lower guaranteed rst year and annual degradation • Minimized micro-cracks with innovative non-destructive cutting technology • Ensured PID resistance through cell process and module material control • Resistant to harsh environments such as salt, ammonia, sand, high temperature and high humidity areas • Mechanical performance up to 5400 Pa positive load and 2400 Pa negative load• Excellent IAM (Incident Angle Modi er) and low irradiation performance, validated by 3rd party certi cations • The unique design provides optimized energy production under inter-row shading conditions • Designed for compatibility with existing mainstream system components • Higher return on Investment• Large area cells based on 210mm silicon wafers and 1/3-cut cell technology • Up to 21.4% module eciency with high density interconnect technology • Multi-busbar technology for better light trapping eect, lower series resistance and improved current collection

Measurements

Height (mm)2187
Width (mm)1102
Depth (mm)35
Weight (kg)26.3

Attachments

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Availability
1 - 4 pcs